Kingston HyperX 8GB (2 x 4GB) in M11xR3 Have someone try it?

I have ear that the m11xR3 have a limit in the memory speed due to something in the bios... But have someone try this Kingston HyperX 8GB (2 x 4GB) 204-Pin DDR3 SO-DIMM DDR3 1600 (PC3 12800) Laptop Memory Model KHX1600C9S3K2/8GX about what I read they are DDR3 1333mhz low latency chips but with the Intel XMP profile so with the XMP it runs at 1600 if not they run at 1333Mhz....

I have the stock 8Gb (2x4Gb hynix) memory so after upgrade with the crucial m4 now I think I can do something about the memory but I cant find nothing better in less than the CL 9 that have the original Dimms, what you think about this Kingston HyperX 8GB (2 x 4GB) 204-Pin DDR3 SO-DIMM DDR3 1600 (PC3 12800) Laptop Memory Model KHX1600C9S3K2/8GX or any other hyperx or other brand hi-end memory's? What you recommend? if I install the hyperX in 1600mhz or above will they runs ok, or may I expect any issue different that about memory downgrade the speed to 1333mhz?

Recommend me what is the best and faster memory I can get to this notebook?? I know that it is not really important and difficult to see the difference but if there is any improvement I want it ...

 

Tech info from kingston about they hyperX memory:

Kingston's KHX1866C11S3P1K2/8G is a kit of two 512M x 64-
bit (4GB) DDR3-1866 CL11 SDRAM (Synchronous DRAM)
2Rx8 memory modules, based on sixteen 256M x 8-bit DDR3
FBGA components per module. Total kit capacity is 8GB. Each
module kit has been tested to run at JEDEC DDR3-1866 at a
low latency timing of 11-11-11 at 1.5V. Additional timing
parameters are shown in the PnP Timing Parameters section.
Each 204-pin SODIMM uses gold contact fingers and requires
+1.5V. The electrical and mechanical specifications are as
follows:

Note: PnP implementation is only possible in configurations that
include a BIOS that supports the PnP function. Your maximum
speed will be determined by your BIOS.


PnP JEDEC TIMING PARAMETERS:
• DDR3-1866 CL11-11-11 @1.5V
• DDR3-1600 CL10-10-10 @1.5V
• DDR3-1333 CL8-8-8 @1.5V

FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 933MHz fCK for 1866Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 9 (DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component

read it here

 

About other hyperx:

DESCRIPTION
Kingston's KHX1600C9S3P1K2/8G is a kit of two 512M x 64-bit
(4GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 2Rx8
memory modules, based on sixteen 256M x 8-bit DDR3 FBGA
components per module. Total kit capacity is 8GB. Each
module kit has been tested to run at JEDEC DDR3-1600 at a
low latency timing of 9-9-9 at 1.5V. Additional timing parameters
are shown in the PnP Timing Parameters section. Each
204-pin SODIMM uses gold contact fingers and requires +1.5V.
The electrical and mechanical specifications are as follows:

Note: PnP implementation is only possible in configurations that
include a BIOS that supports the PnP function. Your maximum
speed will be determined by your BIOS.

PnP JEDEC TIMING PARAMETERS:
• DDR3-1600 CL9-9-9 @1.5V
• DDR3-1333 CL8-8-8 @1.5V
• DDR3-1066 CL6-6-6 @1.5V

FEATURES
• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 8 (DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component

link

 

And about the one I refer in the first post is here:

Kingston's KHX1600C9D3K2/8GX is a kit of two 512M x 64-bit (4GB) DDR3-1600MHz CL9 SDRAM (Synchronous
DRAM) memory modules, based on sixteen 256M x 8-bit DDR3 FBGA components per module. Each module kit supports
Intel® XMP (Extreme Memory Profiles). Total kit capacity is 8GB. Each module pair has been tested to run at DDR3-
1600MHz at a low latency timing of 9-9-9-27 at 1.5V. The SPDs are programmed to JEDEC standard latency DDR3-
1333MHz timing of 9-9-9 at 1.5V. Each 204-pin SODIMM uses gold contact fingers and requires +1.5V. The JEDEC
standard electrical and mechanical specifications are as follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
667MHz fCK for 1333Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8,9,10
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double sided component
PERFORMANCE:
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 160ns
Row Active Time (tRASmin) 36ns (min.)
Power 2.225 W (operating per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C


Link

 

What you think??

If I understand well the first two will work the faster speed the bios let them in the case of the m11xR3 I think it will be 1333mhz, ok so I will not get any speed increase here but If I understand they say that at 1333Mhz they will run with Latency of 8-8-8, I this will be better than the 9-9-9 that I have right now with the stock memory??

Is this correct? if so What you recommend it??

 

http://forum.notebookreview.com/ali...600-1866-ddr3-support-r3-petition-needed.html

 

yeah I have read that thread and some other's asking the same and I know that without a new Bios the M11xR3 will only work at 1333Mhz for memory so if I am not wrong then if I install a faster memory it will force down the speed to 1333mhz that is ok, but my questions are:

1.- Is it ok to work with any of them (at 1333mhz) in the m11xR3? Are stable?
2.- Any know problem installing it? can affect in any way the performance of the system?
3.- I understand well in the hyperX specs that if you get the fasters Dimms, they will work at 1333mhz with CL 8? So better CL than the stock memory so some performance gain will be there not?

 

1: You should be fine with any.
2: Shouldn't be any problems as it will just downclock and the system will just think you have 1333 ram installed.
3: You won't notice much, if any, improvement in real life.

 

I would double check they run at a faster CL in lower speeds. If they can, they will be faster than stock, but not too noticeable unless your a benchmark fanatic. Lets put it this way, if your stuck at the 1333 and want more memory, can support the extra cost. Yes, a lower CL would be ideal. If your just replacing with the same amount you have now for slightly faster CL. Not worth it.

But again, check those really do run at a lower CL setting.

 

Potentiality some updates
have you tried any of this memorys?

I buy the hyperx at middle the one plug and play at 1600...

I try them and some advance to try and see how they work...

How can I try the speed? how to know what speed are they working now?

what program and what result to expect?